Kinetic and gas-phase study of the chemical vapor deposition of silicon carbide from C2H3SiCl3/H2

The chemical vapor deposition (CVD) of silicon carbide from vinyltrichlorosilane (VTS) was studied to identify a range conditions leading pure crystalline SiC. rate recorded evidence the various regimes. Gas phase, elemental analyses and infiltration tests were also performed. Three distinct reaction regimes identified. In CVD conditions, carbon is co-deposited at low temperature while VTS only partially decomposed. composition switches SiC inside porous substrate because depletion reactive hydrocarbon species. Competing heterogeneous reactions are responsible for hysteresis versus temperature, in both deposit. high domain most suitable deposit conditions. Hydrogen dilution strongly accelerates homogeneous decomposition as compared argon. Assumptions on mechanism proposed describing chemistry this precursor.